OBTAINING AND PROPERTIES OF AgInS2 FILMS
https://doi.org/10.18470/1992-1098-2016-2-199-204
Abstract
Aim. The aim is to obtain AgInS2 films and study their electrical and optical properties.
Methods. The samples of thin AgInS2 films for measurement were obtained by the method of magnetron sputtering with direct current. The structure, phase and elemental composition were studied using DRON-2 X-ray diffractometer (СuKа - radiation) and the microscope LEO-1450 with EDS attachment for X-ray microanalysis. The optical transmittance and absorption were examined using MDR-2 monochromator in the wavelength range of 400-800 nm with the Keitley electrometer and FD-10G; we applied the spectral resolution of ± 1 meV. The electrical conductivity, Hall effect was measured by the four-point probe method with indium ohmic contacts. Measurements were carried out in the temperature range of 77-400 K.
Findings. We obtained indium disulfide and silver films with the thickness of up to 1 μm on quartz substrates by magnetron sputtering. It is shown that increasing the substrate temperature to about 450 0С allows to obtain single phase film with a chalcopyrite structure with a band gap of 1.88 eV and high absorption coefficient
(>104см-1).
Conclusions. The possibility of obtaining films in a wide range of the electrical resistance and variation of the electrical parameters at constant stoichiometry is of interest for efficient technologies of phototransduction.
About the Authors
M. A. Abdullaev
Laboratory of optical phenomena in condensed medium, Institute of Physics, Dagestan Scientific Center, RAS, Makhachkala, Russia
Russian Federation
Russian Federation
leading researcher at the Institute of Physics DSC RAS, Doctor of Physical and Mathematical Sciences, Makhachkala, Russia
D. A. Alkhasova
Laboratory of comprehensive development of renewable energy sources, Institute of Geothermal Problems, Dagestan Scientific Center, RAS, Makhachkala, Russia
Russian Federation
Russian Federation
senior researcher, Candidate of Technical Sciences, Institute of Geothermal Problems, Dagestan Scientific Center of RAS 39A, I. Shamil prospekt, Makhachkala, 367030, Russia
References
1. Chopra K., Das S. Tonkoplenochnye solnechnye elementy [Thinfilm solar cells]. Moscow, Mir Publ., 1986. 440 p.
2. Alkhasov A.B. Vozobnovlyaemaya Energetika [Renewable energy]. Moscow, Fizmatlit Publ., 2010. 256 p. (In Russian)
3. Ariezo M. and Loferski J.J. Proceedings of the 13th IEEE Photovoltaic Specialists Conference, Washington, DC. 1978, 898 p.
4. Abdullayev M.A., Alkhasov A.B., Magomedova J.Kh. Preparation and properties of a cas-cade solar power inverter with two heterojunctions CuInSe2-AgInSe2-CdS. NeorganicheskiyeMaterialy [Inorganic materials]. 2014, vol. 50, no. 3, pp. 250- 255. (In Russian)
5. Abdullayev M.A., Amirkhanova D.H., Gadzhiyeva R.M., et al. Preparation and study of the crystals and films CuInSe2. Neorganicheskiye Materialy [Inorganic Materials]. 1992, vol. 28, no. 5, pp. 961-964. (In Russian)
6. Palchayeva F.D., Abdullayev M.A., Magomedova J.Kh., Khokhlachov P.P. Localization of electrons in dispersed crystals AgInSe2 during annealing and compensation. Sbornik trudov mezhdunarodnoy konferentsii “Fazovye perekhody, kriticheskiye i nelineynye yavleniya v kondensirovannykh sredakh” [Proceedings of the International Conference "Phase transitions, critical and nonlinear phenomena in condensed media"]. Makhachkala, 2012, pp. 105- 108. (In Russian)
7. Abdullayev M.A., Akhmedov A.K., Magomedova J. Kh., Khokhlachov P.P. Properties of films AgInSe2 obtained by magnetron sputtering. Neorganicheskiye Materialy [Inorganic materials]. 2012, vol. 48, no. 10, pp. 1114-1117. (In Russian)
8. Danilin B.S. Primeneniye nizkotemperaturnoy plazmy dlya naneseniya tonkikh plenok [The use of low-temperature plasma for the deposition of thin films]. Moscow, Energoatomizdat Publ., 1989. 328 p. (In Russian)
9. Novoselova A.V., Lazarev V.B., eds. Fizikokhimicheskiye svoistva poluprovodnikovykh veschestv [The physicochemical properties of semiconductor substances]. Moscow, Nauka Publ., 1979. 480 p. (In Russian)
10. Ukhanov Yu. N. Opticheskie svoistva poluprovodnikov [Optical properties of semiconductors]. Moscow, Nauka Publ., 1977. 324 p. (In Russian)
Review
For citations:
Abdullaev M.A., Alkhasova D.A. OBTAINING AND PROPERTIES OF AgInS2 FILMS. South of Russia: ecology, development. 2016;11(2):199-204. (In Russ.) https://doi.org/10.18470/1992-1098-2016-2-199-204
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